elektronische bauelemente sst2604 5.5a, 30v,r ds(on) 45m n-channel enhancement mode power mos.fet description the rohs compliant product sst2604 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device. features * lower gate charge * fast switching characteristic the sst2604 is universally used for all commercial-industrial applications. 15-jun-2010 rev. c page 1 of 4 d d g d d s 2 6 0 4 date code 1 5 2 3 4 6 g d s drain-source voltage 0.016 20 5.5 4.4 2 -55~+150 3 20 linear derating factor operating junction and storage temperature range tj, tstg continuous drain current,v gs @4.5v continuous drain current,v gs @4.5v pulsed drain current total power dissipation i d @t c =70 i d @t c =25 i dm p d @t c =25 2,1 c o c o c o w / c c o o thermal data parameter symbol ratings unit thermal resistance junction-case /w c rthj-c 62.5 max. o gate-source voltage parameter symbol ratings unit a v v a a w v ds v gs 0 3 3 3 absolute maximum ratings http://www.secosgmbh.com/ any changing of specification will not be informed individual * small footprint & low profile package dimensions in millimeters 2.60 3.00 0.30 0.55 2.70 3.10 0 0.10 max 0.7 1.45 1.40 1.80 0.45 ref o 10 o sot-26 0.95 ref 0.95 ref 1.90 ref 1.2 ref 0.60 ref
h t t p : / / w w w .s e c o sg m b h .c o m/ a n y c ha n g i n g o f s pe c if i c a t i o n w ill no t b e i n f o r m ed i nd i v i dual notes: 1.pulse width limited by safe operating area. 2.pulse width 300us, dutycycle 2%. ?? ?? 15-jun-2010 rev. c page 2 of 4 3.surface mounted on 1 in 2 copper pad of fr4 board; 156 o c/w when mounted on min. copper pad. elektronische bauelemente sst2604 5.5 a, 3 0v,r ds(on) 45 m n-channel enhancement mode power mos.fet [ electrical characteristics( tj=25 c unless otherwise specified) o par am et er sy m b o l max . ty p . tes t co n d i t i o n mi n . un i t forward on voltage reverse recovery time t rr _ reverse recovery change _ q rr nc ns 15 7 =4.8 =4.8 a , v gs =0v. v sd _ _ i s a , v gs =0v. v 1.2 2 _ _ i s dl/dt=100a/us 6 2 3 6 8 15 4 105 35 nc ns pf v gs =0v v ds =25v f=1.0mhz v dd =15v i d =1a v gs =10v r g =3.3 r d =15 [ [ i d =4.8a v ds =24v v gs = 4.5v _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 30 0.02 1.0 100 1 25 45 65 v v/ reference to 25 c , i d = 1m o o c v na ua ua m 7 [ v gs =10v, i d =4.8a v gs =4.5v, i d =2.4a v gs =0v, i d =250ua v gs = 20 v v ds =30v,v gs =0 v ds =24v,v gs =0 v ds =v gs, i d =250ua _ _ _ _ _ _ _ _ _ _ _ _ _ s v ds =10v, i d =4.8a _ _ _ _ 440 10 705 a total gate charge crss qg qgs qgd td (on) td (off) tr ciss coss t f gate-source charge gate-drain ("miller") charge turn-on delay time rise time turn-off delay time fall time input capacitance output capacitance reverse transfer capacitance bv dss bv ds / tj i dss par am et er sy m b o l max . ty p . tes t co n d i t i o n mi n . un i t drain-source breakdown voltage breakdown voltage temp. coefficient gate threshold voltage gate-source leakage current drain-source leakage current (tj=25 ) static drain-source on-resistance drain-source leakage current(tj=55 ) v gs(th) i gss forward transconductance gfs o c o c 2 2 r d s ( o n ) 2 3.0 source-drain diode 2
elektronische bauelemente sst2604 5.5a, 3 0v,r ds(on) 45 m n-channel enhancement mode power mos.fet [ 15-jun-2010 rev. c page3 of 4 ht t p : / /www.se cosgmb h.com/ any c hanging of s pe c ific at ion will no t be inf ormed individual characteristics curve fig 5. forward characteristics of reverse diode fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 6. gate threshold voltage v.s. junction temperature
15-jun-20 10 rev. c page 4 of 4 elektronische bauelemente sst2604 5.5a, 3 0v,r ds(on) 45 m n-channel enhancement mode power mos.fet [ ht t p : / /www.se cosgmb h.com/ any c hanging of s pe c ific at ion will no t be inf ormed individual fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 11. switching time waveform fig 12. gate charge waveform
|
